PACUSB-D3 SWUSB-D3, SWUSBD1, SW USB-D3, SW USBD1, SW USB-1, SW USB1 USB DOWNSTREAM PORT TERMINATOR - from SEMICONWELL USB DOWNSTREAM PORT TERMINATOR SWUSB-D3 FEATURES APPLICATIONS SCHEMATIC A low-capacitance USB downstream port terminator,EMI filter, and transient over-voltage (ESD)protector in a single surface-mounted package ESD protection and termination of USB port ESD protection to +20kV contact discharge, per MIL-STD-883D, Method 3015 All USB peripherals ( PC printers, scanners, zip drives, etc.) ESD protection to +15kV contact discharge, per IEC 61000-4-2 International Standard PDAs / handheld PCs Capacitors matched to a precision exceeding the USB specification Digital cameras Compact SOT23-5 and SC70-5 package options save board space and lower manufacturing costs compared to discrete solutions Wireless Handets MP3 Player Cable Modems SHORT PRODUCT APPLICATION NOTE The SWUSB-D3 are single-channel USB downstream-port termination networks. The SWUSB-D3 integrate EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the required 15kW pull-down resistors (R2) to GND. In addition, PACUSB-D3/D2/D3 provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The device pins will safely dissipate ESD strikes of +15kV, exceeding the maximum requirements of the IEC 61000-4-2 international standard. Using the MILSTD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected from contact discharges to +20kV. There are three options for the value of the series resistor R1: 15W, 22W, and 33W. This series resistance, plus the USB driver output resistance, must be close to the USB cable’s characteristic impedance of 45 W(each side) to minimize transmission line reflections. SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. ABSOLUTE MAXIMUM RATINGS Supply voltage Continuous IF Max DC Power to resistor Max Package Power 6V 100mA 100mW 200mW Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. ELECTRICAL CHARACTERISTICS PARAMETER VALUE UNITS V3.3 (Supply voltage) max 5.5 V Operating Temperature Range -40 to 85 °C Storage Temperature Range -65 to +150 °C DC Power to Resistor 100 mW Package Power 200 mW Resistance R1 (SWUSB-D3 only) @ 25°C -20%(min.) 22(typ.) +20%(max.) W Resistance R2 @ 25°C -20%(min.) 15(typ) +20%(max.) KW Temperature Coefficient of Resistance +1300 ppm/°C Capacitance C1@ 1MHz, 0VDC, 25°C -20%(min.) 47(typ.) +20%(max.) pF Capacitance C1@ 1MHz, 2.5VDC, 25°C -20%(min.) 32(typ.) +20%(max.) pF Diode Leakage (ILEAK) @ 3.3 VDC and 25°C 1(typ.) 100(max.) nA Diode Reverse-biased Stand-off Voltage (VD1) I=10mA, 25°C min 5.5 V Signal Clamp Voltage (VD2) Positive Clamp @10mA, 25°C Negative Clamp @ 10mA, 25°C 5.6 (min.) 6.8(typ.) 9.0(max.) -1.5 (min.) -0.8(typ.) -0.4(max.) V V In-system ESD Withstand Voltage (VESD) Human Body Model, MIL-STD-883, Method3015 Pins 1, 3; Notes 2,3 and 4 Pins 4, 5; Notes 2 and 3 IEC 61000-4-2 Contact Discharge Pins 4, 5; Notes 2 and 3 ±4 ±20 ±15 kV Clamping Voltage during ESD Discharge (VCLAMP) MIL-STD-883, Method 3015, 8kV; (Notes 2,5) Positive Negative 12 -7 V V Note 1: Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise. Note 2: Guaranteed by design and characterization. Note 3: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open. Note 4: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,they do not require the high ESD protection levels provided for pins 4 and 5. Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if ESD is applied to pin 6, then the clamping voltage is measured at pin 1). PIN DESCRIPTION LEAD NAME DESCRIPTION 1 D+ CNTR D+ Data to the USB controller circuitry 2 GND Ground Pin 3 D- CNTR D- Data to the USB controller circuitry 4 D- CONN D- Data to the USB connector 5 D+ CONN D+ Data to the USB connector

 
 
SEMICONWELL
Integrated Passive Networks
  USB DOWNSTREAM PORT TERMINATOR
SWUSB-D3
 
 

FEATURES
APPLICATIONS
SCHEMATIC
A low-capacitance USB downstream port terminator,EMI filter, and transient over-voltage (ESD)protector in a single surface-mounted package
ESD protection to +20kV contact discharge, per MIL-STD-883D, Method 3015
ESD protection to +15kV contact discharge, per
IEC 61000-4-2 International Standard
Capacitors matched to a precision exceeding the
USB specification
Compact SOT23-5 and SC70-5 package options save board space and lower manufacturing costs compared to discrete solutions
ESD protection and termination of USB port
All USB peripherals ( PC printers, scanners, zip drives, etc.)
PDAs / handheld PCs
Digital cameras
Wireless Handets
MP3 Player
Cable Modems

SHORT PRODUCT APPLICATION NOTE
The SWUSB-D3 are single-channel USB downstream-port termination networks.
The SWUSB-D3 integrate EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the required 15kW pull-down resistors (R2) to GND. In addition, PACUSB-D3/D2/D3 provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The device pins will safely dissipate ESD strikes of +15kV, exceeding the maximum requirements of the
IEC 61000-4-2 international standard. Using the MILSTD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected from contact discharges to +20kV. There are three options for the value of the series resistor R1: 15W, 22W, and 33W. This series resistance, plus the USB driver output resistance, must be close to the USB cable’s characteristic impedance of 45 W(each side) to minimize transmission line reflections.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Supply voltage Continuous IF Max DC Power to resistor Max Package Power
6V 100mA 100mW 200mW

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS
V3.3 (Supply voltage) max 5.5 V
Operating Temperature Range -40 to 85 °C
Storage Temperature Range -65 to +150 °C
DC Power to Resistor 100 mW
Package Power 200 mW
Resistance R1 (SWUSB-D3 only) @ 25°C -20%(min.)  22(typ.)  +20%(max.) W
Resistance R2 @ 25°C -20%(min.)  15(typ)  +20%(max.) KW
Temperature Coefficient of Resistance +1300 ppm/°C
Capacitance C1@ 1MHz, 0VDC, 25°C -20%(min.)  47(typ.)  +20%(max.) pF
Capacitance C1@ 1MHz, 2.5VDC, 25°C -20%(min.)  32(typ.)  +20%(max.) pF
Diode Leakage (ILEAK) @ 3.3 VDC and 25°C 1(typ.)  100(max.) nA
Diode Reverse-biased Stand-off Voltage
(VD1) I=10mA, 25°C
min 5.5 V
Signal Clamp Voltage (VD2)
 Positive Clamp @10mA,
25°C
 Negative Clamp @ 10mA,
25°C

5.6 (min.)  6.8(typ.)  9.0(max.)

-1.5 (min.)  -0.8(typ.)  -0.4(max.)

V
V
In-system ESD Withstand Voltage (VESD)
Human Body Model, MIL-STD-883, Method3015
Pins 1, 3; Notes 2,3 and 4
Pins 4, 5; Notes 2 and 3
IEC 61000-4-2 Contact Discharge Pins 4, 5; Notes 2 and 3

±4

±20
±15
kV
Clamping Voltage during ESD Discharge (VCLAMP) MIL-STD-883, Method 3015, 8kV; (Notes 2,5)
 Positive
 Negative

12
-7

V
V
Note 1: Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise.
Note 2: Guaranteed by design and characterization.
Note 3: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Note 4: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,they do not require the high ESD protection levels provided for pins 4 and 5.
Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if ESD is applied to pin 6, then the clamping voltage is measured at pin 1).

PIN DESCRIPTION
LEAD NAME DESCRIPTION
1 D+ CNTR D+ Data to the USB controller circuitry
2 GND Ground Pin
3 D- CNTR D- Data to the USB controller circuitry
4 D- CONN D- Data to the USB connector
5 D+ CONN D+ Data to the USB connector

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
SiO2 / Silicon 10±2 43 x 82 ±3 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIODES RESISTORS CAPACITORS
Diodes offers basic ESD protection, with low forward voltage and low power dissipation. Diodes are small physically resulting low junction capacitance and low loading capacitance. Resistive material is ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT PACKAGE PIN OUT
layout image pending
Vin=3,4,5,6,11,12,13,14
Vss=die backside
Vss=1,8,9,16
Vdd=2,7,10,15

STANDARD PRODUCTS ORDERING INFORMATION

R1(W) SC70-5 SOT23-5 BARE DIE
22 SWUSB-D3-SC70 SWUSB-D3-SOT23 SWUSB-D3-5BD

SW PART # QUANTITY SC70 U/P($) SOT23-5 U/P($) BARE DIE U/P($)
SWUSB-D3   5,000pc -SC70   -SOT23   -5BD  
SWUSB-D3 10,000pc -SC70   -SOT23   -5BD  
For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com

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Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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